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Thin Film Growth of Group III Nitrides by Mass Separated Ion Beam Deposition

Published online by Cambridge University Press:  10 February 2011

C. Ronning ,
E. Dreher ,
H. Feldermann ,
M. Sebastian ,
J. Zweck ,
R. Fischer  and
H. HofsÄss
C. Ronning
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
E. Dreher
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
H. Feldermann
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
M. Sebastian
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
J. Zweck
Affiliation:
Universität Regensburg, NFW-2 Physik, Universitätsstr. 31, 93040 Regensburg, Germany
R. Fischer
Affiliation:
Universität Regensburg, NFW-2 Physik, Universitätsstr. 31, 93040 Regensburg, Germany
H. HofsÄss
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, 78434 Konstanz, Germany
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Abstract

We have grown gallium nitride (GaN), aluminum nitride (AIN) and boron nitride (BN) thin films by mass separated ion beam deposition. All deposited films were found to be almost stoichiometric. AIN and GaN films are crystalline even after room temperature deposition whereas for the formation of crystalline boron nitride temperatures above 150°C are necessary. The influence on the phase formation and the film structure of ion energy and substrate temperature on the one hand, and bond ionicity on the other hand, was investigated for these three systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 331
Copyright
Copyright © Materials Research Society 1997

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References

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