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Thin Films of Antimony-Tin Oxide as Counter-Electrodes for Proton Working Electrochromic Devices

Published online by Cambridge University Press:  21 March 2011

N. Naghavi ,
C. Marcel ,
L. Dupont ,
A. Rougier  and
J-M. Tarascon
N. Naghavi
Affiliation:
Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 80039 Amiens Cedex.
C. Marcel
Affiliation:
Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 80039 Amiens Cedex.
L. Dupont
Affiliation:
Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 80039 Amiens Cedex.
A. Rougier
Affiliation:
Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 80039 Amiens Cedex.
J-M. Tarascon
Affiliation:
Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 80039 Amiens Cedex.
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Abstract

We report here on thin films proton-working electrochromic devices based on the wellknown tungsten oxide as the coloring electrode, and Antimony Tin Oxide (ATO) as the ionstorage counter-electrode. We show that films deposited by Pulsed Laser Deposition (PLD) technique have an apparent Sb solubility up to 70 at %, and exhibit unusual electrochromic properties. Through potentiostatic tests we'll demonstrate that depending on the composition which influences film morphology, the Sn-Sb-O films could either present a faradic or a capacitive-like behavior, associated to a color or a neutral switching over a wide range of potentials, respectively. The structural properties of ATO films are characterized by X-ray diffraction and transmission electron microscopy (TEM). Electrochromic behavior is studied by means of cyclic voltamperometry coupled with ex situ optical transmittance measurements in the visible range. The maximum proton-storage capacity is observed for ATO films containing 40–50 at % Sb, while being quasi-neutral when switching over a wide range of potentials. These compositions are finally retained for the assembly of our WO3/proton-electrolyte/ATO devices, whose performances are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H8.3.1
Copyright
Copyright © Materials Research Society 2002

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References

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