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Thin Films of p-Type CdTe Grown with Ion-Beam-Assisted Doping

Published online by Cambridge University Press:  25 February 2011

Paul Sharps ,
Alan L. Fahrenbruch ,
Adolfo Lopez-Otero  and
Richard H. Bube
Paul Sharps
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Alan L. Fahrenbruch
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Adolfo Lopez-Otero
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Richard H. Bube
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Extract

The purpose of the present work is to investigate p-CdTe thin films grown by ionassisted doping (IAD). Controlled doping in homo-epitaxial films resulting in carder densities up to 2×1017 cm-3 was obtained using P ions as the dopant. About 1.5% of the impinging P ions became electrically active in the films. Solar cells of n-CdS/p-CdTe were prepared and used as a diagnostic tool in understanding the p-CdTe films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 701
Copyright
Copyright © Materials Research Society 1989

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References

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