Hostname: page-component-77c89778f8-n9wrp Total loading time: 0 Render date: 2024-07-18T08:18:25.957Z Has data issue: false hasContentIssue false
  • English
  • Français

Thin Ni Silicide Formation by Low Temperature-Induced Metal Atom Reaction with Ion Implanted Amorphous Silicon

Published online by Cambridge University Press:  25 February 2011

Yu.N. Erokhin ,
B. K. Patnaik ,
S. Pramanick ,
F. Hong ,
C. W. White  and
G. A. Rozgonyi
Yu.N. Erokhin
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–7916
B. K. Patnaik
Affiliation:
Department of Physics and Astronomy, University of North Carolina, Chapel Hill, NC 27599–3255
S. Pramanick
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–7916
F. Hong
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–7916
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831–6057
G. A. Rozgonyi
Affiliation:
Department of Materials Science & Engineering, North Carolina State University, Raleigh, NC 27695–7916
Get access

Abstract

We have extended our recent work [1,2] on buried suicide formation by Ni diffusion into a buried amorphous silicon layer to the case where silicide formation is at lower temperatures on silicon substrates which have been preamorphized. The reaction of metal atoms from a 12 nm Ni film evaporated on top of a 65 nm thick surface amorphous layer formed by 35 keV Si+ ion implantation has been investigated at temperature ≤400 °C. Rutherford Backscattering Spectrometry (RBS) with channeling, cross-sectional transmission electron microscopy (XTEM), X-ray diffraction and four-point-probe measurements were used to determine the structure, interfacial morphology, composition and resistivity of the silicide films. It has been found that an increased rate of silicidation occurs for amorphous silicon with respect to crystalline areas permitting a selective control of the silicon area to be contacted during silicide growth. Vacuum furnace annealing at 360 °C for 8 hours followed by an additional step at 400 °C for one hour produces a continuos NiSi2 layer with a resistivity 44 μΩ cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 237
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1]. Erokhin, Yu. N., Grotzschel, R., Oktyabrsky, S.R., Roorda, S., Sinke, W.C. in Phase Formation and Modification by Beam-Solid Interactions, edited by Was, G. S., Rehn, L.E., and Follstaedt, D.M.. (Mat. Res. Soc. Symp. Proc. 235, Pittsburg, PA 1991), p.313.Google Scholar
[2]. Erokhin, Yu. N., Grotzschel, R., Oktyabrsly, S.R., Roorda, S., Sinke, W.C. Materials Science and Engineering B12, 103 (1992).Google Scholar
[3]. Fan, J.C.C. and Anderson, H., J. Appl. Phys., 52, 4003 (1981).CrossRefGoogle Scholar
[4]. Sinke, W. C., Roorda, S. and Saris, F., J. Mater. Res., 3, 1203 (1988).Google Scholar
[5]. Clevenger, L. A., Thompson, C. V., Tu, K.N., J. Appl Phys., 67, 2894.CrossRefGoogle Scholar
[6]. Osburn, C. M., Journal of Electronic Materials, 19, 67 (1990).Google Scholar
[7]. Mohadjeri, B., Linnors, J., Svensson, B.S., Ostling, M., Johansson, S., d'Heurle, F.M. in Advanced Metallization and Processing for Semiconductor Devices and Circuits - II, edited by Katz, A., Murarka, Sh. P., Nissim, Yu. I. and Harper, J. M. E.. (Mat. Res. Soc. Symp. Proc. 260, Pittsburg PA 1991), p.405.Google Scholar
[8]. Mohadjeri, B., Linnros, J., Svensson, B. S., Ostling, M., Phys. Rev. Lett., 68, 1872 (1992).CrossRefGoogle Scholar
[9]. Hayzelden, C., Batstone, J. L., Cammarata, R. C., Appl Phys. Lett. 60, 225 (1992).Google Scholar