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Thin-Film Transistors based on Hot-Wire Amorphous Silicon on Silicon Nitride

Published online by Cambridge University Press:  15 February 2011

B. Stannowski ,
H. Meiling ,
A. M. Brockhoff  and
R. E. I. Schropp
B. Stannowski
Affiliation:
Debye Institute, Interface Physics, Utrecht UniversityP.O. Box 80000, 3508 TA Utrecht, The Netherlands
H. Meiling
Affiliation:
Debye Institute, Interface Physics, Utrecht UniversityP.O. Box 80000, 3508 TA Utrecht, The Netherlands
A. M. Brockhoff
Affiliation:
Debye Institute, Interface Physics, Utrecht UniversityP.O. Box 80000, 3508 TA Utrecht, The Netherlands
R. E. I. Schropp
Affiliation:
Debye Institute, Interface Physics, Utrecht UniversityP.O. Box 80000, 3508 TA Utrecht, The Netherlands
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Abstract

We present state-of-the-art thin-film transistors (TFTs) incorporating amorphous silicon i-layers deposited by hot-wire chemical vapor deposition. The TFTs are deposited on glow-discharge silicon nitride as well as on thermally-grown silicon dioxide. The devices on silicon nitride have a field-effect mobility above 0.7 cm2/Vs, a threshold voltage around 2 V and a sub-threshold slope as low as 0.5 V/dec. As commonly observed, the TFTs on silicon-dioxide have higher values for the threshold voltage and the sub-threshold slope. In the annealed state the hot-wire TFTs show almost the same properties as TFTs deposited by conventional plasma-enhanced chemical vapor deposition. Nevertheless, the stress-time dependent behavior under prolonged gate-voltage stress at elevated temperature is different from that of the glow-discharge devices. The hot-wire TFTs are clearly more stable than their glow-discharge counterparts. Furthermore, we found differences in the stress behavior of the hot-wire TFTs deposited on silicon nitride and silicon dioxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 659
Copyright
Copyright © Materials Research Society 1999

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