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Thin-Film Transistors Fabricated With Poly-Si Films Crystallized by Microwave Annealing

Published online by Cambridge University Press:  10 February 2011

YongWoo Choi ,
JeongNo Lee ,
TaeWoong Jang  and
ByungTae Ahn
YongWoo Choi
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon, 305-701, KOREA
JeongNo Lee
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon, 305-701, KOREA
TaeWoong Jang
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon, 305-701, KOREA
ByungTae Ahn
Affiliation:
Dept. of Materials Science & Engineering, Korea Advanced Institute of Science and Technology, 373-1 Koosung-dong, Yusung-gu, Taejon, 305-701, KOREA
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Abstract

Solid phase crystallization has the advantages of low cost and excellent uniformity but the crystallization temperature is too high to use glass as a substrate. Using microwave annealing, we crystallized a-Si films at 550 °C within 3 h, which is much shorter than the annealing time at 600 °C of furnace annealing. We fabricated TFTs with poly-Si films crystallized by microwave annealing at low temperature and obtained the characteristics slightly better than or at least comparable to the TFTs by furnace annealing in spite of smaller grain size. This may be due to the improvement of surface roughness of poly-Si film. The poly-Si TFTs with PECVD a-Si film showed better characteristics than the TFTs with LPCVD a-Si film because of larger grain size and smoother Si/SiO2 interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 139
Copyright
Copyright © Materials Research Society 1998

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