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Time Resolved Reflectivity Measurements Applied to Rapid Isothermal Annealing of Ion Implanted Silicon

Published online by Cambridge University Press:  25 February 2011

P. J. Timans ,
R. A. McMahon  and
H. Ahmed
P. J. Timans
Affiliation:
Microelectronics Research Laboratory, Cambridge University, Cambridge Science Park, Milton Road, Cambridge CB4 4BH, U.K.
R. A. McMahon
Affiliation:
Microelectronics Research Laboratory, Cambridge University, Cambridge Science Park, Milton Road, Cambridge CB4 4BH, U.K.
H. Ahmed
Affiliation:
Microelectronics Research Laboratory, Cambridge University, Cambridge Science Park, Milton Road, Cambridge CB4 4BH, U.K.
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Abstract

The annealing of ion implantation damage in silicon by rapid isothermal heating has been monitored by the time resolved reflectivity (TRR) method. This technique was applied simultaneously at a wavelength of 632.8nm and also at 1152nm, where the optical absorption coefficient of silicon is less. The two wavelength method simplifies the interpretation of TRR results, extends the measurement depth and allows good resolution of the position of the interface between amorphous and crystalline silicon. The regrowth of amorphous layers in silicon, created by self implantation and implanted with electrically active impurities, was observed. Regrowth in rapid isothermal annealing occurs during the heating up stage of typical thermal cycles. Impurities such as B, P, and As increase the regrowth rate in a manner consistent with a vacancy model for regrowth. The maximum regrowth rate in boron implanted silicon is limited by the solid solubility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 337
Copyright
Copyright © Materials Research Society 1985

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References

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