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Ti/Ni/Au/Diamond MIS Field Effect Transistors With TiO2 Gate Dielectric

Published online by Cambridge University Press:  11 February 2011

Yuhong Cai  and
Aris Christou
Yuhong Cai
Affiliation:
Department of Material Science and Engineering, University of Maryland, College Park, MD 20770, U.S.A.
Aris Christou
Affiliation:
Department of Material Science and Engineering, University of Maryland, College Park, MD 20770, U.S.A.
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Abstract

Ti/Ni/Au/diamond metal-insulator-semiconductor field effect transistors with TiO2 gate dielectric have been successfully fabricated. In this work, multi-layer metallization on the semiconducting diamond surface was investigated. Post-metallization annealing was performed and EDS analysis was conducted both before annealing and after annealing. Elevated temperature annealing accelerates the diffusion between multi-layer metal and lowers the ohmic contact resistance of the interface. Current-voltage characteristics of the transistor are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.8
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Pan, Lawrence S., Kania, Don R.. DIAMOND ELECTRONIC PROPERTIES AND APPLICATIONSGoogle Scholar
2. Clay, F.A., Panaousis, N.T., Pierce, R.W. Jr, IEEE Trans. Compon., Hybrids Manuf. Technol. 10 (1974) 258.Google Scholar
3. Gildenblat, GSh, Grot, SA, Hatfield, CW, Badzian, AR, Badzian, T. IEEE Electron Device Lett. 1990; 11: 371.Google Scholar
4. Moazed, KL, Zeidler, JR, Taylor, MJ. J. Appl. Phys. 1990; 68: 2246.Google Scholar
5. Moazed, KL, Nguyen, R, Zeidler, JR. IEEE Electron Device Lett. 1988; 9: 350.Google Scholar
6. Tjonga, S.C.,, Wongb, N.B., Lic, G., Leea, S.T.. Materials Chemistry and Physics 62 (2000) 241–246 Google Scholar
7. Fuyuki, T. and Matsunami, H., “Electronic Properties of the Interface Between Si and TiO 2 Deposited at Very Low Temperatures,” Jpn. J. Appl. Phys. 25, 1288 (1986).Google Scholar
8. Rausch, N. and Burte, E. P., “Thin High-Dielectric TiO 2 Films Prepared by Low Pressure MOCVD,” Engineering 19, 725 (1992).Google Scholar
9. Rausch, N. and Burte, E. P., “Thin TiO 2 Films Prepared by Low Pressure Chemical Vapor Deposition,” J. Electrochem. Soc. 140, 145 (1993). 390 Google Scholar
10. Brown, W. D. and Grannemann, W. W., “C–V Characteristics of Metal–Titanium Dioxide–Silicon Capacitors,” Solid State Electron. 21, 837 (1978).Google Scholar
11. Campbell, S. A., Kim, H.-S., Gilmer, D. C., He, B., Ma, T., Gladfelter, W. L.. Titanium dioxide (TiO 2 )-based gate insulatorsGoogle Scholar
12. Pang, Lisa Y.S., Chan, Simon S.M., Chalker, Paul R., Johnston, Colin, Jackman, Richard B.. Materials Science and Engineering B46 (1997) 124–128 Google Scholar