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Ti/Pt Based Contacts to Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  25 February 2011

T. S. Kalkur ,
P. D. Wright ,
S. K. Ko ,
Y. C. Lu ,
L. Casas  and
K. A. Jones
T. S. Kalkur
Affiliation:
Microelectronics Research Laboratories, Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, CO 80933
P. D. Wright
Affiliation:
Martin Kestrel Company, Inc., Colorado Springs, CO.
S. K. Ko
Affiliation:
Martin Kestrel Company, Inc., Colorado Springs, CO.
Y. C. Lu
Affiliation:
Department of Electrical and Computer Engineering, Rutgers University, New Jersey.
L. Casas
Affiliation:
Army Research Lab, Electronic Technology and Device Laboratory, Fort Monmouth, NJ 07703.
K. A. Jones
Affiliation:
Army Research Lab, Electronic Technology and Device Laboratory, Fort Monmouth, NJ 07703.
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Abstract

Ti/Pt metallization was used to form contacts on both n+-InAs emitter cap and p+ base layers of heterojunction bipolar transistors (HBTs). The as-deposited contacts were found to be ohmic for both the base and emitter cap layers. Rapid thermal processing of the contact metallizations was performed in the temperature range of 3 00–500 C for 30 seconds. Minimum contact resistivities of l×10-6 ohm-cm2 for the base and 3×l0-7 ohm-cm2 for the emitter layer were achieved. The influence of heat treatment on contact morphology was also examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 549
Copyright
Copyright © Materials Research Society 1992

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References

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