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Topological Signatures of Medium Range Order in Amorphous Semiconductor Models
Published online by Cambridge University Press: 17 March 2011
Abstract
The topological local cluster (or Schläfli cluster) concept of Marians and Hobbs is used to detect topologically crystalline regions in models of disordered tetrahedral semiconductors. We present simple algorithms for detecting both Wells-type shortest circuits and O'Keeffe-type rings, which can be used to delineate alternative forms of the Schläfli cluster in models.
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- Research Article
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- Copyright © Materials Research Society 2000
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