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Towards p-type doping of ZnO by ion implantation

Published online by Cambridge University Press:  26 February 2011

V. A. Coleman ,
H. H. Tan ,
C. Jagadish ,
S. O. Kucheyev ,
M. R. Phillips  and
J. Zou
V. A. Coleman
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, ACT 0200, Australia
H. H. Tan
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, ACT 0200, Australia
C. Jagadish
Affiliation:
Department of Electronic Materials Engineering, The Australian National University, Canberra, ACT 0200, Australia
S. O. Kucheyev
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550, U.S.A.
M. R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology Sydney, Broadway, NSW 2007, Australia
J. Zou
Affiliation:
School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia, QLD 4072, Australia
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Abstract

Zinc oxide is a very attractive material for a range of optoelectronic devices including blue light-emitting diodes and laser diodes. Though n-type doping has been successfully achieved, p-type doing of ZnO is still a challenge that must be overcome before p-n junction devices can be realized. Ion implantation is widely used in the microelectronics industry for selective area doping and device isolation. Understanding damage accumulation and recrystallization processes is important for achieving selective area doping. In this study, As (potential p-type dopant) ion implantation and annealing studies were carried out. ZnO samples were implanted with high dose (1.4 × 1017 ions/cm2) 300 keV As ions at room temperature. Furnace annealing of samples in the range of 900°C to 1200°C was employed to achieve recrystallization of amorphous layers and electrical activation of the dopant. Rutherford backscattering/channeling spectrometry, transmission electron microscopy and cathodolumiescence spectroscopy were used to monitor damage accumulation and annihilation behavior in ZnO. Results of this study have significant implications for p-type doing of ZnO by ion implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B8.7
Copyright
Copyright © Materials Research Society 2005

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References

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