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Transient Forward Bias Response of Amorphous Silicon P-I-N Diodes

Published online by Cambridge University Press:  21 February 2011

R. A. Street  and
M. Hack
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
M. Hack
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
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Abstract

When a forward bias is applied to an amorphous silicon p-i-n diode, there is a delay in the onset of the current. We present experimental data and numerical calculations, showing that the effect is due to trapped space charge which inhibits the onset of a double injection current. The dependence of the delay time on defect density, bias, illumination and the location of the defects is examined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 831
Copyright
Copyright © Materials Research Society 1992

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References

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