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Transient Photoresponse of Amorphous Silicon p-i-n Diodes
Published online by Cambridge University Press: 26 February 2011
Abstract
Amorphous silicon p-i-n diodes were illuminated with LED-generated trains of rectangular light pulses under various duty-cycle conditions. Our results indicate that such diodes are able to handle modulation rates in excess of 10MHz over a wide range of operating temperatures. Measurements of the dark I-V characteristics show that the shot-noise in properly designed junctions can be reduced to a level comparable to c-Si photodiodes.
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- Copyright © Materials Research Society 1987
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