Hostname: page-component-84b7d79bbc-4hvwz Total loading time: 0 Render date: 2024-07-25T14:26:42.595Z Has data issue: false hasContentIssue false
  • English
  • Français

Transition Metal Luminescence in AlN Crystals

Published online by Cambridge University Press:  21 February 2011

K. Pressel ,
R. Heitz ,
S. Nilsson ,
P. Thurian ,
A. Hoffmann  and
B.K. Meyer
K. Pressel
Affiliation:
Institut für Halbleiterphysik, P.O.Box 409, 15204 Frankfurt (Oder), Germany
R. Heitz
Affiliation:
Institut für Festkörperphysik, TU-Berlin, 10623 Berlin, Germany
S. Nilsson
Affiliation:
Institut für Halbleiterphysik, P.O.Box 409, 15204 Frankfurt (Oder), Germany
P. Thurian
Affiliation:
Institut für Festkörperphysik, TU-Berlin, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Institut für Festkörperphysik, TU-Berlin, 10623 Berlin, Germany
B.K. Meyer
Affiliation:
Physik-Department E16, TU-München, 85748 Garching, Germany
Get access

Abstract

We study deep defects in AIN crystals in the near infrared by photoluminescence and compare the observed emissions with those in GaN. By below bandgap excitation with an Ar ion laser three no-phonon lines at 1.043 eV, 0.943 eV, and 0.797 eV were detected, which are caused by different residual transition metal contaminants. The weak emission at 1.043 eV and the intensive emission at 0.797 eV show A1N related phonon sidebands, whereas the emission at 0.943 eV has practically no phonon sideband. No hot lines could be detected for the emissions at 0.943 and 0.797 eV in temperature dependent measurements. We discuss possible identifications of the luminescence centers and the similarity between GaN and AIN in view of transition metals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 613
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Nakamura, S., Mukai, T., and Senoh, M., J. of Appl. Phys. 76, 8189 (1994)Google Scholar
2 Baur, J., Maier, K., Kunzer, M., Kaufmann, U., Schneider, J., Amano, H., Akasaki, I., Detchprohm, T., and Hiramatsu, K., Appl. Phys. Lett. 64, 857 (1994)Google Scholar
3 Baur, J., Maier, K., Kunzer, M., Kaufmann, U., and Schneider, J., Appl. Phys. Lett. 65, 2211 (1994)Google Scholar
4 Baur, J., Kaufmann, U., Kunzer, M., Schneider, J., Amano, H., Akasaki, I., Detchprohm, T., and Hiramatsu, K., Appl. Phys. Lett. 67, 1140 (1995)Google Scholar
5 Heitz, R., Thurian, P., Loa, I., Eckey, L., Hoffmann, A., Broser, I., Pressel, K., Meyer, B.K., Mokhov, E.N., Appl. Phys. Lett. 67, 2822 (1995)Google Scholar
6 Heitz, R., Thurian, P., Loa, I., Eckey, L., Hoffmann, A., Broser, I., Pressel, K., Meyer, B.K., and Mokhov, E.N., presented at the 18th International Conference on Defects in Semiconductors, Sendai, Japan (unpublished)Google Scholar
7 Heitz, R., Pressel, K., Thurian, P., Loa, I., Eckey, L., Hoffmann, A., Broser, I., Meyer, B.K., Mokhov, E.N., accepted for publication in Phys. Rev. B Google Scholar
8 Mc Neil, L.E., Grinsditd, M., French, R.H., J. Am. Ceram. Soc. 76, 1132 (1993)Google Scholar
9 DiBartholo, B., Optical Interactions in Solids (John Wiley & Sons, New York, 1968)Google Scholar
10 Pressel, K., Heitz, R., Eckey, L., Loa, I., Thurian, P., Hoffmann, A., Meyer, B.K., Fischer, S., the same conferenceGoogle Scholar
11 Pressel, K., Nilsson, S., Heitz, R., Hoffmann, A., Meyer, B.K., accepted for publication in Journal of Appl. Phys. Google Scholar
12 Uihlein, Ch. and Eaves, L., Phys. Rev. B 26, 4473 (1982)Google Scholar