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Transition Metals in Electrically active Sites after Incoherent Light Annealing of Boron-Doped Czochralski-Grown Silicon

Published online by Cambridge University Press:  26 February 2011

D. Barbier ,
M. Remram  and
J. Zhu
D. Barbier
Affiliation:
Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein, F69621 Villeurbanne Cedex, France
M. Remram
Affiliation:
Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein, F69621 Villeurbanne Cedex, France
J. Zhu
Affiliation:
Institut National des Sciences Appliquées de Lyon, 20 Avenue Albert Einstein, F69621 Villeurbanne Cedex, France
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Abstract

Two hole trap levels H(0.45) and H(0.29) with properties close to those of metal-related defect states were found in virgin or implanted CZ silicon substrates submitted to a short duration Rapid Thermal Annealing (RTA) around 1000 °C. These hole trap levels were assigned to the presence of Fe or Cr in interstitial solution after RTA. Control experiments using chromium-diffused samples allowed to verify the quenching mechanism of chromium atoms in electrically active site during the annealing treatment, with a cooling rate-dependent concentration. After a subsequent low temperature annealing, the supersaturated interstitial solution of chromium evolves toward more stable defect configurations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 223
Copyright
Copyright © Materials Research Society 1988

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References

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