Hostname: page-component-77c89778f8-9q27g Total loading time: 0 Render date: 2024-07-18T14:16:41.334Z Has data issue: false hasContentIssue false
  • English
  • Français

Tuning the Mechanical Properties of SiO2 Thin Film for MEMS Application

Published online by Cambridge University Press:  01 February 2011

Wang-Shen Su ,
Weileun Fang  and
Ming-Shih Tsai
Wang-Shen Su
Affiliation:
Institute of Microelectromechanical Systems, National Tsing-Hua Uninersity, No. 101, Sec. 2, Kuang-Fu Rd., Hsinchu 300, Taiwan
Weileun Fang
Affiliation:
Institute of Microelectromechanical Systems, National Tsing-Hua Uninersity, No. 101, Sec. 2, Kuang-Fu Rd., Hsinchu 300, Taiwan
Ming-Shih Tsai
Affiliation:
National Nano Device Laboratory, 1001–1 Ta-Hsueh Road, Hsinchu 300, Taiwan
Get access

Abstract

This study reported a novel method for tuning thin film mechanical properties by means of plasma surface modification. In order to demonstrate the feasibility of this approach, various plasma treatments, including O2, H2, NH3 atmospheres, were implemented to tune the Young's modulus and residual stress of SiO2 film. Without plasma treatment, the static tip deflection of 200μm long SiO2 cantilever was 9.01μm. After treatment with H2, O2, and NH3 plasma, the tip deformation of the treated cantilevers became 10.22μm, 8.28μm, and -6.84μm respectively. The Young's modulus of the SiO2 cantilever without plasma treatment was 76.3GPa. After treated with H2, O2, NH3 plasma, the Young's modului of those treated cantilevers became 70.8 GPa, 74.7 GPa, and 71.4 GPa, respectively. Hence, after H2 and NH3 plasma treatment, the equivalent elastic modulus of SiO2 cantilever could be reduced about 7%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 795: Symposium U – Thin Films - Stresses and Mechanical Properties X , 2003 , U8.25
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fang, W., Lo, Chun-Yen, Sensors and Actuators A, 84, 310–314 (2000).Google Scholar
2. Ing, J. R. Jr, Davern, W., J. Electrochem. Soc. 126, 930 (1979).Google Scholar
3. Choi, J.-K. et al., Surface and Coatings Tech., 131, 153–157 (2000).Google Scholar
4. Kim, M. C., Yang, S. H. et al., Surface and Coatings Tech., 174–175, 8391844 (2003).Google Scholar
5. Tsai, H. C. and Fang, W., Sensors and Actuators A, 103, 377–383 (2003).Google Scholar
6. Oliver, W.C., Pharr, G.M., J. Mater. Res. 7, 1564 (1992).Google Scholar
7. Vaz, F., Machado, P. et al., Surface and Coatings Tech., 174–175, 375–382 (2003).Google Scholar
8. Perry, Anthony J., Bull, Steve J. et al., Surface and Coatings Tech., 133–134, 253–258 (2000).Google Scholar