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Ultra-Fast NiSi2 Formation in p+-Si by High Current Densities

Published online by Cambridge University Press:  10 February 2011

J.S. Huang  and
K.N. Tu
J.S. Huang
Affiliation:
Lucent Technologies, Bell Labs, 9333 S. John Young Parkway, Orlando, FL 32819
K.N. Tu
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA 90095-1595
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Abstract

An ultra-fast lateral formation of epitaxial NiSi2 line in heavily doped p+-Si diffused tub was created at room temperature ambient under the application of current densities of 106 A/cm2. A NiSi2 line of 140 μm long and I μm wide linking the cathode and anode contacts to p+-Si was formed within 1 second. Shorter lines were formed with lower current densities. The formation of shorter lines was again completed within 1 second and there was very little subsequent growth upon further stressing. The line length strongly depends upon applied current which tend to suggest that the line formation is limited by driving force rather than by kinetics. We propose that the ultra-fast silicide formation is a result of Ni interstitial diffusion in Si induced by electron-hole recombination heating and electromigration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 423
Copyright
Copyright © Materials Research Society 1998

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References

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