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Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces

Published online by Cambridge University Press:  31 January 2011

Simone Möllenbeck ,
Anja Hanisch-Blicharski ,
Paul Schneider ,
Manuel Ligges ,
Ping Zhou ,
Martin Kammler ,
Boris Krenzer  and
Michael Horn-von Hoegen
Simone Möllenbeck
Affiliation:
simone.moellenbeck@uni-due.de, University of Duisburg-Essen, Department of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), Duisburg, Germany
Anja Hanisch-Blicharski
Affiliation:
anja.hanisch@uni-due.de, University of Duisburg-Essen, Department of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), Duisburg, Germany
Paul Schneider
Affiliation:
paul.schneider@uni-due.de, University of Duisburg-Essen, Department of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), Duisburg, Germany
Manuel Ligges
Affiliation:
manuel.ligges@uni-due.de, University of Duisburg-Essen, Department of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), Duisburg, Germany
Ping Zhou
Affiliation:
ping.zhou@uni-due.de, University of Duisburg-Essen, Department of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), Duisburg, Germany
Martin Kammler
Affiliation:
martin.kammler@uni-due.de, United States
Boris Krenzer
Affiliation:
boris.krenzer@uni-due.de, University of Duisburg-Essen, Department of Physics and Center for Nanointegration Duisburg-Essen (CeNIDE), Duisburg, Germany
Michael Horn-von Hoegen
Affiliation:
horn-von-hoegen@uni-due.de, United States
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Abstract

The dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4×2) to a (2×1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4×2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4×1) reconstruction which undergoes a Peierls like phase transition to a (8ד2”) reconstruction below 100 K. Upon laser excitation at a temperature of 40 K the phase transition was strongly driven. The (8ד2”)-diffraction spots instantaneously disappears, while the intensity of the (4×1)-spots increases. This increase of the (4×1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface.

Keywords

RHEEDSiIn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1230: Symposium MM – Ultrafast Processes in Materials Science , 2009 , 1230-MM03-09
Copyright
Copyright © Materials Research Society 2010

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