No CrossRef data available.
Article contents
Uniaxial Stress Applied To p-Type GaAs/AlGaAs Heterostructures: Influence on Heavy Hole Subbandsau
Published online by Cambridge University Press: 15 February 2011
Abstract
Quantum Hall effect and Shubnikov-de Haas oscillations in a 2D hole gas at a p-GaAs/Al0.5Ga0 5As (001) interface show, that under in-plane (110) uniaxial compression a redistribution of carriers between the two spin-splitted subbands of the ground heavy hole state takes place. At the maximal compression of 2.5 kbar the carrier density of the most populated subband is decreased by 18%, while the total carrier density remains almost unchanged. A decrease of the spin-splitting under the uniaxial compression is proposed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996