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Use of a Native Oxide of AlxGa1−xAs in the Fabrication of Integrated Laser/Modulators
Published online by Cambridge University Press: 22 February 2011
Abstract
A planar self-aligned process for fabricating integrated lasers and modulators is described. This process employs a native oxide of AlxGa1−xAs to form the waveguide structure and dielectric passivation layer. Wet oxidation of AlxGa1−xAs is being investigated to determine possible processing parameters that result in good quality oxides and a reliable fabrication process. Variations in the mechanical properties were observed with changes in processing parameters.
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- Copyright © Materials Research Society 1993