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Use of Optical Emission Spectroscopy as a Diagnostic Technique for Plasma Deposition of Hydrogenated Amorphous Silicon and Carbon

Published online by Cambridge University Press:  15 February 2011

F. J. Kampas
F. J. Kampas*
Affiliation:
Division of Metallurgy and Materials Science, Brookhaven National Laboratory, Upton, New York 11973
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Abstract

Optical emission intensities have been measured as a function of composition for silane-argon and silane-hydrogen mixtures used in the deposition of hydrogenated amorphous silicon. It was found that changes in silane fraction have a large effect on the electron concentration and energy distribution in the discharge.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 30: Symposium L – Plasma Processing and Synthesis of Materials I , 1983 , 291
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Haller, I., J. Vac. Sci. Technol. A 1, 1376 (1983)Google Scholar
2. Kampas, F.J., J. Appl. Phys. 54, 2276 (1983)Google Scholar
3. Kampas, F.J. and Griffith, R.W., J. Appl. Phys. 52, 1285 (1981)Google Scholar
4. Perrin, J. and Schmitt, J.P.M., Chem. Phys. 67, 167 (1982)Google Scholar
5. Donohue, D.E., Schiavone, J.A., and Freund, R.S., J. Chem. Phys. 67, 769 (1977)Google Scholar
6. Coburn, J.W. and Chen, M., J. Appl. Phys. 51, 3134 (1980)Google Scholar
7. de Rosny, G., Mosburg, E.R. Jr., Abelson, J.R., Devaud, G., and Kerns, R.C., J. Appl. Phys. 54, 2272 (1983)Google Scholar
8. Kushner, M.J., J. Appl. Phys. 53, 2939 (1982)Google Scholar