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V2O5 and β-CuxV2O5 Thin Films Grown by Mocvd

Published online by Cambridge University Press:  15 February 2011

A. Gleizes ,
J.-M. Bufforn ,
C. Salzman ,
E. Virette  and
F. Senocq
A. Gleizes
Affiliation:
E.N.S. Chimie de Toulouse (I.N.P.T.), Laboratoire “Cristallochimie, Réactivité et Protection des Matériaux”, 118 route de Narbonne, F-31077 Toulouse cedex 4, France, gleizes@cict.fr
J.-M. Bufforn
Affiliation:
E.N.S. Chimie de Toulouse (I.N.P.T.), Laboratoire “Cristallochimie, Réactivité et Protection des Matériaux”, 118 route de Narbonne, F-31077 Toulouse cedex 4, France, gleizes@cict.fr
C. Salzman
Affiliation:
E.N.S. Chimie de Toulouse (I.N.P.T.), Laboratoire “Cristallochimie, Réactivité et Protection des Matériaux”, 118 route de Narbonne, F-31077 Toulouse cedex 4, France, gleizes@cict.fr
E. Virette
Affiliation:
E.N.S. Chimie de Toulouse (I.N.P.T.), Laboratoire “Cristallochimie, Réactivité et Protection des Matériaux”, 118 route de Narbonne, F-31077 Toulouse cedex 4, France, gleizes@cict.fr
F. Senocq
Affiliation:
E.N.S. Chimie de Toulouse (I.N.P.T.), Laboratoire “Cristallochimie, Réactivité et Protection des Matériaux”, 118 route de Narbonne, F-31077 Toulouse cedex 4, France, gleizes@cict.fr
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Abstract

Thin films of V2O5 and β-CuxV2O5 have been grown by MOCVD using VO(OiPr)3 and Cu(tmhd)2 (tmhd = tetramethylheptanedionato) as precursor molecules. Films were grown on chips of Si3N4 coated silicon wafers in a cold wall reactor using a H.F. heater. A mixture of helium and oxygen was used as a reactive carrier gas, and depositions were performed at low pressure. The films were examined by SEM, characterized by XRD, and analyzed by EDS and EMPA techniques. All the films proved to be carbon free.

For V2O5, the substrate temperature was varied from 450 to 630°C. The films are highly caxis oriented for both ends of the temperature range, and less oriented for intermediate temperatures. For 630°C, the XRD pattern consists almost entirely of reflections (001) and (002).

For β-CuxV2O5, the substrate temperature was varied from 450°C to 650°C. Pure β-phase films with x varying from 0.25 to 0.55 have been obtained above 500°C, by using well chosen gas phase composition. Morphology and texture depend dramatically on the temperature. The most oriented films exhibit a strong anisotropy of electrical surface conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 453: Symposium R – Solid State Chemistry of Inorganic Materials , 1996 , 77
Copyright
Copyright © Materials Research Society 1997

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References

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