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Vacancies In Electron Irradiated 6H-SiC
Published online by Cambridge University Press: 15 February 2011
Abstract
Annealing of electron irradiated bulk n-type 6H-SiC has shown that neutral carbon vacancies and neutral silicon vacancies undergo a major reduction in concentration in the 20–200 °C temperature interval after which only slight changes occur up to 1200 °C. The experiments suggest that the positively charged carbon vacancy, detected by electron paramagnetic resonance, constitutes only a small fraction of all carbon vacancies.
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- Copyright © Materials Research Society 1997
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