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Valence Band Parameters for Wurtzite GaN and InN

Published online by Cambridge University Press:  10 February 2011

Y. C. Yeo ,
T. C. Chong  and
M. F. Li
Y. C. Yeo
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, S 119260, Singapore
T. C. Chong
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, S 119260, Singapore
M. F. Li
Affiliation:
Centre for Optoelectronics, Department of Electrical Engineering, National University of Singapore, 10 Kent Ridge Crescent, S 119260, Singapore
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Abstract

Theoretical studies and design of quantum well lasers employing InGaN require material parameters for both GaN and InN. However, the Luttinger-like effective-mass parameters for InN are currently unavailable. In this work, we extract effective-mass parameters for wurtzite GaN and InN from their electronic band structures calculated using the Empirical Pseudopotential Method (EPM). We obtain the electron and hole (including the heavy- (HH), light- (LH), and crystal-field split-off (CH) holes) effective-masses at the Γ point in the kz and the in-plane kx-ky plane) directions using a parabolic fit. In addition, the hole effective-mass parameters are derived using the 6×6 effective-mass Hamiltonian and the k.p method. Our results will be useful for material design in wide-gap nitride-based semiconductor lasers containing InGaN.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 923
Copyright
Copyright © Materials Research Society 1998

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