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Validation of the p-type Behavior of an Ag-doped ZnSe Film Grown Heteroepitaxially on GaAs(100) Substrate

Published online by Cambridge University Press:  01 February 2011

Takashi Narushima ,
Hiroaki Yanagita  and
Masahiro Orita
Takashi Narushima
Affiliation:
Takashi_Narushima@sngw.rdc.hoya.co.jp, HOYA Corporation, R&D Center, 3-3-1 Musashino, Akishima-shi, Tokyo, 196-8510, Japan, +81-42-546-2730, +81-42-546-2742
Hiroaki Yanagita
Affiliation:
hiroaki.yanagita@hoyavc.com, HOYA Corporation, R&D Center, 3-3-1 Musashino, Akishima-shi, Tokyo, 196-8510, Japan
Masahiro Orita
Affiliation:
orita@sngw.rdc.hoya.co.jp, HOYA Corporation, R&D Center, 3-3-1 Musashino, Akishima-shi, Tokyo, 196-8510, Japan
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Abstract

To validate p-type semiconducting behavior in Ag-doped ZnSe, single-crystal films were grown on GaAs(100) substrates using an evaporation method with ZnSe and Ag2Se powder sources. The heteroepitaxial relationship between ZnSe(100) and GaAs(100) was observed using X-ray diffraction and transmission electron microscopy; secondary phases containing silver or silver selenide were not detected. A film doped with Ag at 1 1020 atm·cm-3 had a conductivity of 1.5 x 10-5 S·cm-1. The hot-probe test indicated p-type polarity, with a clear and reproducible rectifying characteristic demonstrated by forming a ZnSe:Ag/p-GaAs:Zn junction. The work function of a ZnSe:Ag film measured by ultraviolet photoelectron spectroscopy was 6.3 eV. The ZnSe:Ag film is suitable as an injection layer in widegap semiconductor devices and organic light-emitting diodes.

Keywords

II-VIsemiconductingcrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y03-16
Copyright
Copyright © Materials Research Society 2007

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