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Van Der Waals Epitaxy of II-Vi Semiconductors on Layered Chalcogenide (0001) Substrates: Towards Buffer Layers for Lattice Mismatched Systems?
Published online by Cambridge University Press: 10 February 2011
Abstract
The II-VI semiconductor CdS was grown by molecular beam epitaxy on the van der Waals faces of the layered semiconductor InSe. Chemical, electronic and morphological properties of the deposited films were investigated by means of low energy electron diffraction (LEED), soft x-ray photoelectron spectroscopy (SXPS), transmission electron microscopy (TEM), and atomic force microscopy (AFM). In contrast to observations made on other layered crystals, nucleation of CdS on InSe is possible also at elevated temperatures which is attributed to the small lattice mismatch. The growth front of CdS corresponds to the sulfur terminated polar (111)-B surface which has a strong tendency to form facets.
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- Copyright © Materials Research Society 1997
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