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Vapor Deposited Ag2S Films as High Resolution Photoregistering Materials in The Infrared Region

Published online by Cambridge University Press:  22 February 2011

J. Eneva ,
S. Kitova ,
A Panov  and
H. Haefke
J. Eneva
Affiliation:
Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, BG-1113 Sofia, Bulgaria
S. Kitova
Affiliation:
Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, BG-1113 Sofia, Bulgaria
A Panov
Affiliation:
Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, BG-1113 Sofia, Bulgaria
H. Haefke
Affiliation:
Institute of Physics, University of Basel, CH-4056 Basel, Switzerland
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Abstract

Ag2S as a narrow band gap semiconductor is appropriate for photoimaging in the infrared (IR) region. Co-evaporation of Ag and S from two separate sources was used for preparing of thin Ag2S films with different Ag/S ratio. Gelatine subbed glass plates were used as substrates. The structure of the films obtained was examined by transmission electron microscopy and electron diffraction. The effects of chemical composition, film thickness and processing conditions on the photographic parameters were studied.

It is shown that after appropriate processing thin Ag2S films with stoichiometric composition can. be successfully used as high resolution (1600 lines/mm) photographic materials in the IR region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 265
Copyright
Copyright © Materials Research Society 1994

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