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Vapor Deposition of Thin-Film Y-Doped ZrO2 For Electrochemical Device Applications

Published online by Cambridge University Press:  16 February 2011

Brandon W. Chung ,
Eric L. Brosha ,
David R. Brown  and
Fernando H. Garzon
Brandon W. Chung
Affiliation:
Los Alamos National Laboratory, Los Alamos, N.M. 87545
Eric L. Brosha
Affiliation:
Los Alamos National Laboratory, Los Alamos, N.M. 87545
David R. Brown
Affiliation:
Los Alamos National Laboratory, Los Alamos, N.M. 87545
Fernando H. Garzon
Affiliation:
Los Alamos National Laboratory, Los Alamos, N.M. 87545
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Abstract

The growth of high-quality, pin-hole free, ytrrium doped ZrO2 thin films is of great interest for a variety of electrochemical applications such as fuel cells and oxygen gas separation devices. In the work, we have grown polycrystalline thin films of ytrrium doped ZrO2 on thick porous Al2O3 substrates in multilayer La1-xSrxMEO3/YSZ/La1-xSrxMEO3 (ME = Mn, Co) configurations using a combination of single-target RF magnetron sputtering and electron beam physical vapor deposition techniques. The structure and morphology of these films have been studied using X-ray diffraction, and Scanning Electron Microscopy techniques. The ionic conductivity of the thin films has been measured using AC impedance analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 369: Symposium U – Solid State Ionics IV , 1994 , 623
Copyright
Copyright © Materials Research Society 1995

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