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Vertical Transport Properties of GaN Schottky Diodes Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

M. Misra ,
A.V. Sampath  and
T.D. Moustakas
M. Misra
Affiliation:
Department of Electrical Engineering and the Photonics Center, Boston University, MA 02215
A.V. Sampath
Affiliation:
Department of Electrical Engineering and the Photonics Center, Boston University, MA 02215
T.D. Moustakas
Affiliation:
Department of Electrical Engineering and the Photonics Center, Boston University, MA 02215
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Abstract

Lateral and vertical electron transport parameters were investigated in lightly doped n-GaN films, grown by MBE. Diodes were fabricated by forming Schottky barriers on n--GaN films using a mesa-etched vertical geometry. Doping concentrations and barrier heights were determined, from C-V measurements, to be 8-9×1016 cm-3 and 0.95-1.0 eV respectively. Reverse saturation current densities were measured to be in the 1-10times;10-9 A/cm2 range. Using the diffusion theory of Schottky barriers, vertical mobility values were determined to be 950 cm2/V-s. Lateral mobility in films grown under similar conditions was determined by Hall effect measurements to be 150-200 cm2/V-s. The significant increase in mobility for vertical transport is attributed to reduction in electron scattering by charged dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.2
Copyright
Copyright © Materials Research Society 1999

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References

1. Ng, H.M., Doppalapudi, D., Moustakas, T.D., Weimann, N.G. and Eastman, L.F., Appl. Phys. Lett., 73, 821, (1998)Google Scholar
2. Weimann, N.G., Eastman, L.F., Doppalapudi, D., Ng, H.M. and Moustakas, T.D., J. Appl. Phys. 83, 3656, (1998)Google Scholar
3. Nakamura, S., in Gallium Nitride I edited by Pankove, J., Moustakas, T.D., Semiconductors and Semimetals, Vol.50, Chapter 14, 431, Academic Press, New York, 1998 Google Scholar
4. Shur, M.S. and Khan, M. Asif, in Gallium Nitride I edited by Pankove, J., Moustakas, T.D., Semiconductors and Semimetals, Vol.57, Chapter 10, 407, Academic Press, New York, 1998 Google Scholar
5. Moustakas, T.D., in Gallium Nitride I edited by Pankove, J., Moustakas, T.D., Semiconductors and Semimetals, Vol.57, Chapter 2, Academic Press, New York, 1998 Google Scholar
6. Smith, A.R., Feenstra, R.M., Greve, D.W., Shin, M-S, Skowronski, M., Neugebauer, J., Northrup, J.E., Appl. Phys. Lett., 72, 2114, (1998)Google Scholar
7. Sampath, A.V., M.S. Thesis, Boston University, (1996)Google Scholar
8. Sze, S.M., “Physics of Semiconductor Devices”, 2nd edition, 258, John Wiley and Sons, New York, (1981)Google Scholar
9. Schmitz, A.C., Ping, A.T., Khan, M. Asif, Chen, Q., Yang, J.W., Adesida, I., Semicond. Sci. Technol. 11, 1464, (1996)Google Scholar
10. Wang, L., Nathan, M.I., Lim, T.H., Khan, M.A., Chen, Q., Appl. Phys. Lett., 68, 1267, (1996)Google Scholar
11. Spenke, E., Electronic Semiconductors, (McGraw-Hill, New York, 1958), 84 Google Scholar