Hostname: page-component-5c6d5d7d68-thh2z Total loading time: 0 Render date: 2024-08-16T22:26:11.243Z Has data issue: false hasContentIssue false
  • English
  • Français

Vibrational Stretching Modes of the Si-H and Si-D Bonds in Amorphous Silicon Nitride

Published online by Cambridge University Press:  17 March 2011

Shu-Ya Lin
Shu-Ya Lin*
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30043, Taiwan
Get access

Abstract

The vibrational density of states for the SiH(D) and SiH2(D2) groups in amorphous silicon nitride are calculated. The Si-H(D) bond-stretching modes of the SiH2(D2) groups are found to split, with the Si-D bond-stretching mode having larger splitting. The difference between the Si-D bond-stretching frequency of the SiD group and the Si-D asymmetrical stretching frequency of the SiD2 group has about the same value as that of the Si-H bonds. The differences in the effective masses of the Si-H and Si-D bonds and the degrees of the bond-stretching splitting of the SiH2 and SiD2 groups have compensating effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A21.5
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tsu, D.V., Lucovsky, G., and Mantini, M.J., Phys. Rev. B 33, 7069 (1986).Google Scholar
2. Hasegawa, S., Matuura, M., Anbutu, H. and , Kurata, Philos. Mag. B 56, 633 (1987).Google Scholar
3. Parsons, G.N., and Lucovsky, G., Phys. Rev. B 41, 1664 (1990).Google Scholar
4. Santos-Filho, P., Koh, K., Stevens, G., Lucovsky, G., Mater. Res. Soc. Symp. Proc. 406, 57 (1996).Google Scholar
5. Lucovsky, G., Santos-Filho, P., Banerjee, A., and Jing, Z., Mater. Res. Soc. Symp. Proc. 420, 503 (1996).Google Scholar
6. Lucovsky, G., Jing, Z., Santos-Filho, P., Stevens, G., and Banerjee, A., J. Non-Cryst. Solids, 198–200, 19 (1996).Google Scholar
7. Santos-Filho, P., Stevens, G., Lucovsky, G., Cull, T., Fedders, P., Leopold, D., and Norberg, R., J. Non-Cryst. Solids 198–200, 77 (1996).Google Scholar
8. Giorgis, F., Giuliani, F., Pirri, C. F., Tresso, E., Summonte, C., Rizzoli, R., Galloni, R., Desalvo, A. and Rava, P., Philos. Mag. B 77, 925 (1998).Google Scholar
9. Allan, D.C., and Joannopoulos, J.D., The Physics of Hydrogenated Amorphous Silicon II, ed. Joannopoulos, J.D., and Lucovsky, G., Springer-Verlag, Berlin, 1984, p. 5.Google Scholar
10. Lucovsky, G. and Pollard, W.B., The Physics of Hydrogenated Amorphous Silicon II, ed. Joannopoulos, J.D., and Lucovsky, G., Springer-Verlag, Berlin, 1984, p. 302.Google Scholar
11. Martin, R.M., Phys. Rev. B 1, 4005 (1970).Google Scholar
12. Pollard, W.B., and Lucovsky, G., Phys. Rev. B 26, 3172 (1982).Google Scholar
13. Lucovsky, G., Yang, J., Chao, S.S., Tyler, J.E., and Czubatyj, W., Phys. Rev. B 28, 3234 (1983).10.1103/PhysRevB.28.3234Google Scholar
14. Lin, S. Y., J. Appl. Phys. 82, 5976 (1997).Google Scholar
15. Lucovsky, G., Springer Ser. In Solid State Sci. 33, 87 (1981).Google Scholar
16. Agrawal, B.L., Yadav, P.S., and Ghosh, B.K., J. Phys. C: Solid State Phys. 21, 3397 (1988).Google Scholar