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Visible Luminescence of Rare Earth Ions Doped Amorphous Zinc Oxide Thin Films Grown by Sputtering Technique

Published online by Cambridge University Press:  01 February 2011

Wojciech M. Jadwisienczak
Affiliation:
jadwisie@ohio.edu, Ohio University, School of EECS, Stocker Center 351, Athens, OH, 45701, United States, 740-593-2067, 740-593-0007
Ajay S. Vemuru
Affiliation:
av273006@ohio.edu, Ohio Universtity, School of EECS, Athens, OH, 45701, United States
Saima Khan
Affiliation:
saima@helios.phy.ohiou.edu, Ohio University, Department of Physics, Athens, OH, 45701, United States
Aurangzeb Khan
Affiliation:
khan@phy.ohiou.edu, Ohio University, Department of Physics, Athens, OH, 45701, United States
Marty E. Kordesch
Affiliation:
kordesch@helios.phy.ohiou.edu, Ohio University, Department of Physics, Athens, OH, 45701, United States
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Abstract

We report on the luminescence of rare earth (RE) (Sm, Er, Tm) ions doped ZnO films grown by the rf-magnetron sputtering technique. Samples were insitu doped with Sm ion or with Sm, Er, and Tm ions simultaneously without any intentional co-dopants and deposited on c-Si or quartz substrates at low temperatures. Selected ZnO:RE samples were thermally annealed in 200ºC-1000ºC temperature range in oxygen or argon gas at ambient pressure. As-grown and annealed samples were amorphous (a-ZnO) as was confirmed by the X-ray analysis. Furthermore, a-ZnO:RE samples were investigated by energy diffraction, photoluminescence and cathodoluminescence. In general, CL spectra of as-grown RE-doped a-ZnO films show characteristic emission lines due to 4f-shell transitions of RE3+ ions. Optical excitation of as-grown a-ZnO doped with RE ions using above the bandgap excitation resulted in strong host emission overlapped with weak RE3+ emission bands. It was observed that a thermal annealing process promotes changes of RE ions' environments resulting in significant 4f-shell transition luminescence intensity quenching.

Type
Research Article
Copyright
Copyright © Materials Research Society 2008

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