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VLS Growth of III-V Semiconductor Nanowires on Graphene Layers

Published online by Cambridge University Press:  17 May 2012

K. Tateno ,
D. Takagi ,
G. Zhang ,
H. Gotoh ,
H. Hibino  and
T. Sogawa
K. Tateno*
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
D. Takagi
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
G. Zhang
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
H. Gotoh
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
H. Hibino
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
T. Sogawa
Affiliation:
NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
*
*Email: tateno.kouta@lab.ntt.co.jp
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Abstract

GaP, GaAs, and InP nanowires were grown on graphitic layers by the vapor-liquid-solid method in a metalorganic vapor phase epitaxy chamber. On graphene/SiC(0001), Au particles as catalyst were formed at the steps by controlling the Au deposition rate and the annealing temperature in a low-energy electron microscopy system. GaP nanowires were grown on this substrate, and it was found that vertical nanowires were formed at the steps of the surface. We also performed GaP, GaAs, and InP nanowire growth on graphite substrates. Free-standing nanowires were obtained for all three materials, although they were vertically, diagonally, and laterally-oriented at the same time. The results suggested that the growth at the steps is the key to growing nanowires vertically on graphene surface.

Keywords

vapor phase epitaxy (VPE)III-Vnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1439: Symposium N/AA – Nanowires and Nanotubes-Synthesis, Properties, Devices, and Energy Applications of One-Dimensional Materials , 2012 , pp. 45 - 50
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

Bolotin, K. I., Sikes, K. J., Jiang, Z., Klima, M., Fudenberg, G., Hone, J., Kim, P., and Stormer, H.L., Solid State Commun. 146, 351 (2008).CrossRefGoogle Scholar
Bae, S., Kim, H., Lee, Y., Xu, X., Park, J. -S., Zheng, Y., Balakrishnan, J., Lei, T., Kim, H. R., Song, Y. I., Kim, Y. -J., Kim, K. S., Özyilmaz, B., Ahn, J. -H., Hong, B. H., and Iijima, S., Nat. Nanotechnol. 5, 574 (2010).CrossRefGoogle Scholar
Kim, Y.-J., Lee, J.-H. and Yi, G.-C., Appl. Phys. Lett. 95, 213101 (2009).CrossRefGoogle ScholarPubMed
Kim, Y.-J., Hadiyawarman, , Yoon, A., Kim, M., Yi, G.-C. and Liu, C., Nanotechnology 22, 245603 (2011).CrossRefGoogle Scholar
Hong, Y. J. and Fukui, T., ACS Nano, 5, 7576 (2011).CrossRefGoogle Scholar
Koma, A., Thin Solid Films, 216, 72 (1992).CrossRefGoogle Scholar
Kageshima, H., Hibino, H., Nagase, M., and Yamaguchi, H., APEX, 2, 065502 (2009).CrossRefGoogle Scholar
Ishii, A., Tatani, T., and Nakada, K., Phys. Stat. Soli. (C) 8, 1585 (2011).CrossRefGoogle Scholar
Hibino, H., Kageshima, H., Maeda, F., Nagase, M., Kobayashi, Y., and Yamaguchi, H., Phys. Rev. B 77, 075413 (2008).CrossRefGoogle Scholar
Tateno, K., Hibino, H., Gotoh, H., and Nakano, H., Appl. Phys. Lett. 89, 033114 (2006).CrossRefGoogle Scholar
Nagase, M., Hibino, H., Kageshima, H., and Yamaguchi, H., Nanotechnology 20, 445704 (2009).CrossRefGoogle Scholar
Norimatsu, W., and Kusunoki, M., Physica E 42, 691 (2010).CrossRefGoogle Scholar
Lu, X., Yu, M., Huang, H., and S Ruoff, R., Nanotechnology 10, 269 (1999).CrossRefGoogle Scholar