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Wide Bandgap ≥1.8eV Amorphous Silicon for Solar Multijunction Cell and Image Sensor Applications

Published online by Cambridge University Press:  17 March 2011

Andrzej Kolodziej ,
Pawel Krewniak  and
Ryszard Tadeusiewicz
Andrzej Kolodziej
Affiliation:
Institute of Electronics, University of Mining and Metallurgy, al.Mickiewicza 30, 30-059 Kraków, Poland
Pawel Krewniak
Affiliation:
Institute of Electronics, University of Mining and Metallurgy, al.Mickiewicza 30, 30-059 Kraków, Poland
Ryszard Tadeusiewicz
Affiliation:
Institute of Electronics, University of Mining and Metallurgy, al.Mickiewicza 30, 30-059 Kraków, Poland
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Abstract

This paper discusses the use of wide bandgap a-Si:H prepared by reactive magnetron sputtering (RMS) in low temperature and hydrogen control process deposition for multijunction cell applications. Primarily technological experiments are presented. The studies were carried out on a-Si:H films and TCO / n+ a-Si:H / i a-Si:H / Nickel Schottky barrier structures with i layer thicknesses ranging between 0.1 and 0.5 μm, using AFM, X-ray small angle and Raman spectroscopy, and optical transmission and reflection measurements after a degraded steady state. The properties exhibited by the films obtained in various ways are compared. In particular, fill factor dependence on light, field, and thickness is presented for RMS films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A5.2
Copyright
Copyright © Materials Research Society 2000

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References

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