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Wiring and introduction of single silicon nanocrystals into multi-walled carbon nanotubes

Published online by Cambridge University Press:  01 February 2011

Vladimir Švrček ,
Francois Le Normand ,
Ovidui Ersen ,
Coung Pham-Huu ,
Dominique Begin ,
Benoit Louis  and
Marc-Jaques Ledoux
Francois Le Normand
Affiliation:
IPCMS, UMR 7504 CNRS, 23 rue du Loess, F-67037 Strasbourg, France
Ovidui Ersen
Affiliation:
IPCMS, UMR 7504 CNRS, 23 rue du Loess, F-67037 Strasbourg, France
Coung Pham-Huu
Affiliation:
LMSPC-ECPM, 25, rue Becquerel, F67087 Strasbourg, France
Dominique Begin
Affiliation:
LMSPC-ECPM, 25, rue Becquerel, F67087 Strasbourg, France
Benoit Louis
Affiliation:
LMSPC-ECPM, 25, rue Becquerel, F67087 Strasbourg, France
Marc-Jaques Ledoux
Affiliation:
LMSPC-ECPM, 25, rue Becquerel, F67087 Strasbourg, France
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Abstract

For a long time the application of silicon technology for optoelectronics has been limited by the extremely poor generation of light by bulk silicon. However, the properties of Si were found to depend on its structure at a nanometric scale and bright photoluminescence from silicon nanocrystals (Si-nc) was discovered. In this work, the results obtained for the mechanical connecting of single Si-nc by two independent techniques are presented. First, the room temperature approach of connecting and introducing Si-nc embedded in colloidal suspensions by capillary forces within multi-walled carbon nanotubes (MWCNTs) and second, the direct growth of MWCNTs on single Si-nc coated with iron catalyst are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A4.5
Copyright
Copyright © Materials Research Society 2005

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References

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