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Work Function Difference Between N-Type μc-Si Gate Electrodes Deposited by Remote Pecvd and P-Type c-Si Substrates in Mos Capacitors
Published online by Cambridge University Press: 21 February 2011
Abstract
We have used remote PECVD to deposit highly-doped μc-Si films for use as gate electrodes in MOS capacitors. The flatband voltages of capacitors with different oxide thicknesses have been measured by high-frequency capacitance-voltage and have been used to determine the work function difference between an n-type μc-Si electrode and a p-type c-Si substrate. This value for ϕμs is discussed in terms of a band diagram for the stacked-gate MOS device, and is compared to the expected value.
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- Copyright © Materials Research Society 1992