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Wrong Bonds at Compound Semiconductor Grain Boundaries
Published online by Cambridge University Press: 26 February 2011
Abstract
The role of cation-cation and anion-anion “wrong” bonds at compound semiconductor grain boundaries is investigated. Results are presented for the {110} and {001} inversion domain boundaries in SiC and GaAs. The role of electrostatic effects, compensation of over- and undersaturated bonds, “chemical” reconstructions andbond length relaxations are discussed.
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- Copyright © Materials Research Society 1991
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