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X-Ray Diffraction From Buried GaAs/GaSb Interfaces

Published online by Cambridge University Press:  21 February 2011

Alain Bourret ,
P. H. Fuoss ,
A. Rocher  and
C. Raisin
Alain Bourret
Affiliation:
AT&T Bell Lab. Holmdel NJ. Present address : CEN Grenoble, DRF/Service de Physique, 38041 Grenoble F
P. H. Fuoss
Affiliation:
T&T Bell Labs. Murray Hill, NJ
A. Rocher
Affiliation:
CEMES/LOE -31400 Toulouse, France
C. Raisin
Affiliation:
LESIC -34060 Montpellier, France
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Abstract

The initial stage of epitactic growth of GaSb film on GaAs has been studied by X-ray diffraction. On each island the 8% misfit is accommodated by a periodic network composed of two perpendicular sets of Lomer dislocations. This network is already formed at 10Å nominal thickness. The relaxation of the e ilayer towards its bulk lattice parameter is almost complete so that a supercell is observed. The behaviour of the dislocation satellites is accurately explained by the presence of a periodic displacement field at and close to the interface. A quantitative fit with a simple elastic model is, however, insufficient to fit the data, implying that interdiffusion occurs close to the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 208: Symposium J – Advances in Surface and Thin Film Diffraction , 1990 , 303
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Kiely, C.J., Rockett, A., Chyi, J.I. and Morkoc, H., Boston, MRS Fall Meeting 1989 (to be published)Google Scholar
[2] Hull, R. and Bean, J.C., Appl. Phys. Lett. 54, 925 (1989)Google Scholar
[3] Tatarenko, S., Cibert, J., Gobil, Y., Feuillet, C., Saminadayar, K., Chami, A.C., Ligeon, E., Applied Surface Science, 41/42, 470 (1989)CrossRefGoogle Scholar
[4] Rocher, A., DaSilva, F.W.O. and Raisin, C., Revue Phys. Appl. 25, 957 (1990)Google Scholar
[5] Fuoss, P.H. and Robinson, I.K., Nucl. Inst. and Methods, A 222, 164 (1984)Google Scholar
[6] Vlieg, E., Van der Veen, J.F., Macdonald, J.E. and Miller, M., J. Appl. Phys. 20, 330 (1987)Google Scholar
[7] Van der Merwe, J.H., J. Appl. Phys. 41, 4725 (1970)Google Scholar
[8] Bonnet, R., Phil. Mag. A 43, 1165 (1981)Google Scholar
[9] Willis, J.R., Jain, S.C. and Bullough, R., Phil. Mag. A 62, 115 (1990)Google Scholar
[10] Bonnet, R., Phil. Mag. A. 51, 51 (1985)Google Scholar
[11] Bourret, A., Fuoss, P. and A. Rocher (to be published)Google Scholar
[12] Bourret, A., Fuoss, P., Rocher, A. and Raisin, C., presented at the 1990, EPS meeting, Anaheim, CA, 1990 (unpublished)Google Scholar