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X-ray Diffraction Study of InGaN/GaN Superlattice Implanted with Eu3+ Ions

Published online by Cambridge University Press:  31 January 2011

Mohammad Ahmad Ebdah ,
Martin E. Kordesch ,
Andre Anders  and
Wojciech M. Jadwisienczak
Mohammad Ahmad Ebdah
Affiliation:
physics_clark@yahoo.com, Ohio University, physics, Athens, Ohio, United States
Martin E. Kordesch
Affiliation:
kordesch@ohio.edu, Ohio University, Physics, Athens, Ohio, United States
Andre Anders
Affiliation:
aanders@lbl.gov, Lawrence Berkeley National Laboratory, Berkeley, California, United States
Wojciech M. Jadwisienczak
Affiliation:
jadwisie@ohio.edu, Ohio University, School of EECS, Stocker Center 363, Athens, Ohio, 45701, United States, 740-593-2067, 740-593-0007
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Abstract

In this work, europium implanted InGaN/GaN SL with a fixed well/barrier thickness ratio grown by metal-organic chemical-vapor deposition (MOCVD) on GaN/(0001) sapphire substrate were investigated. The as-grown and Eu ion implanted InGaN/GaN SLs were annealed at different temperatures ranging from 600°C to 950°C in nitrogen ambient. The quality of the SL interfaces in undoped and implanted structures has been investigated by X-ray diffraction (XRD) at room temperature. The characteristic satellite peaks of SLs were measured for the (0002) reflection up to the second order in the symmetric Bragg geometry. The XRD simulation spectrum of the as-grown SL agrees well with the experimental results. The simulation results show x=0.06 atomic percent the InGaN well sub-layers, with thicknesses of 2.4 and 3.3 nm for single InGaN well and GaN barrier, respectively. It was observed that annealing of the undoped SL does not significantly affect the interfacial quality of the superstructure, whereas, the Eu ion implanted InGaN/GaN SL undergo partial induced degradation. Annealing the implanted SLs shows a gradual improvement of the multilayer periodicity and a reduction of the induced degradation with increasing the annealing temperature as indicated by the XRD spectra.

Keywords

x-ray diffraction (XRD)nitridestructural
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I05-20
Copyright
Copyright © Materials Research Society 2010

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