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X-ray Photoelectron Spectroscopy Evaluation on Surface Chemical States of GaN, InGaN and AlGaN Heteroepitaxial Thin Films Grown on Sapphire by MOCVD

Published online by Cambridge University Press:  10 February 2011

K. Li ,
A.T.S. Wee ,
J. Lin ,
Z. C. Feng  and
S.J. Chua
K. Li
Affiliation:
Institute of Materials Research and Engineering, Singapore, 117602, k-li@imre.org.sg
A.T.S. Wee
Affiliation:
National University of Singapore, Kent Ridge Road, Singapore, 119260
J. Lin
Affiliation:
National University of Singapore, Kent Ridge Road, Singapore, 119260
Z. C. Feng
Affiliation:
Institute of Materials Research and Engineering, Singapore, 117602, k-li@imre.org.sg
S.J. Chua
Affiliation:
Institute of Materials Research and Engineering, Singapore, 117602, k-li@imre.org.sg National University of Singapore, Kent Ridge Road, Singapore, 119260
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Abstract

The surface chemical states of MOCVD grown GaN, AlGaN and InGaN, and the influence of different dopants have been studied with x-ray photoelectron spectroscopy (XPS). The results show that for most of the samples the N 1s peak can be fitted with a dominant GaN peak at the binding energy of 397.2 ± 0.2 eV and a small N-H peak at the binding energy of 398.5 ± 0.2 eV, while Ga 3d can be deconvoluted into three peaks, i.e., elemental Ga at 18.5 ± 0.1 eV, GaN at 19.7 ± 0.1 eV, and Ga2O3 at 20.4 ± 0.1 eV. Si-doping appears to have small influence on the surface chemical states of GaN. Compared with Si-doping, the influence of Mg-doping appears -to be larger. In addition to a change in the component intensities, Mg-doping also causes the N ls and Ga 3d peaks to broaden. The ternary AlxGa1−xN (x ∼ 0.025) sample shows aluminum surface segregation, while the undoped InxGa1−xN(x ∼0.12) shows indium surface deficiency

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 303
Copyright
Copyright © Materials Research Society 2000

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References

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