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X-Ray Sensing Properties of a Lead Oxide Photoconductor Combined With an Amorphous Silicon Tft Array

Published online by Cambridge University Press:  10 February 2011

A. Brauers ,
N. Conrads ,
G. Frings ,
U. Schiebel ,
M.J. Powell  and
C. Glasse
A. Brauers
Affiliation:
Philips Research Laboratories, PO Box 500145, D-52085 Aachen, Fed. Rep., GERMANY
N. Conrads
Affiliation:
Philips Research Laboratories, PO Box 500145, D-52085 Aachen, Fed. Rep., GERMANY
G. Frings
Affiliation:
Philips Research Laboratories, PO Box 500145, D-52085 Aachen, Fed. Rep., GERMANY
U. Schiebel
Affiliation:
Philips Research Laboratories, PO Box 500145, D-52085 Aachen, Fed. Rep., GERMANY
M.J. Powell
Affiliation:
Philips Research Laboratories, Redhill, RH I 5HA, UNITED KINGDOM
C. Glasse
Affiliation:
Philips Research Laboratories, Redhill, RH I 5HA, UNITED KINGDOM
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Abstract

We present first results on the performance of flat dynamic x-ray detectors (FDXD) based on arrays of amorphous silicon thin film transistors (TFT) with charge storage capacitances and lead oxide as x-ray photoconductor. In order to increase the “active area” of every pixel, the layout of the array has been made in a multilevel arrangement, where the charge collecting electrode is separated from the underlying electronics by a thick insulating layer. This allows for a geometrical overlap of the pixel electrodes and TFTs. PbO has been chosen as the x-ray sensing material due to its very high x-ray sensitivity. The relevant detector properties of evaporated PbO layers are described along with results obtained on first FDXD devices with PbO.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 321
Copyright
Copyright © Materials Research Society 1998

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References

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