Hostname: page-component-77c89778f8-swr86 Total loading time: 0 Render date: 2024-07-19T14:21:02.207Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Topography

Published online by Cambridge University Press:  15 February 2011

Michael Dudley
Michael Dudley*
Affiliation:
Department of Materials Science & Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794-2275
Get access

Abstract

A review of the technique of White Beam Synchrotron X-ray Topography is presented along with some examples of its applications in materials science. Among the topics covered are: the characterization of growth defects in KTiOPO4, ZnTe, and SiC single crystals; studies of phase transitions in perovskite-like crystals; and studies of rapid thermal processing damage in semiconductors. Methodologies for analyzing dislocations, twins (rotational, mirror and inversion twins), precipitates and other crystallographic defects, will be reviewed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 307: Symposium L – Applications of Synchrotron Radiation Techniques to Materials Science , 1993 , 213
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wu, J. and Dudley, M., in this volume, Applications of Synchrotron Radiation Techniques to Materials Science, edited by Perry, D.L., Stockbauer, R., Shinn, N., D'Amico, K., and Terminello, L. (Mater. Res. Soc. Symp. Proc. 307, Pittsburgh, PA, 1993).Google Scholar
2. Wang, S., Dudley, M., Fazi, C. and Gordon-Smith, D., in this volume, Applications of Synchrotron Radiation Techniques to Materials Science, edited by Perry, D.L., Stockbauer, R., Shinn, N., D'Amico, K., and Terminello, L. (Mater. Res. Soc. Symp. Proc. 307, Pittsburgh, PA 1993).Google Scholar
3. Dudley, M., Tolis, G., Gordon-Smith, D., and Fazi, C., Mater. Sci. & Engin., B15, 56 (1992).CrossRefGoogle Scholar
4. Lee, M.B., Fanning, T., DiMarzio, D., Casagrande, L.G., and Dudley, M., in Defect Engineering in Semiconductor Growth, Processing and Device Technology, edited by Ashok, S., Chevallier, J., Sumino, K. and Weber, E., (Mater. Res. Soc. Symp. Proc. 262, Pittsburgh, PA 1993) pp. 169–174.Google Scholar
5. Liu, F., Baker, I., Yao, G., and Dudley, M., Phil. Mag. Letters 65, 279 (1992).Google Scholar
6. Dudley, M., Yao, G.-D., Paine, D., Howard, D., Sacks, R., Mater. Sci. & Engin. B10, 75 (1991).CrossRefGoogle Scholar
7. Tuomi, T., Naukkarinen, K., Rabe, P., Phys. Stat. Sol. (a) 25, 93 (1974).Google Scholar
8. Miltat, J., in Characterization of Crystal Growth Defects by X-ray Methods, edited by Tanner, B.K. and Bowen, D.K., (NATO ASI B63. New York, Plenum, New York, 1980), pp.401–420.Google Scholar
9. Tanner, B.K., X-ray Diffraction Topography (Pergamon, Oxford, 1976).Google Scholar
10. Authier, A., Advanc. X-ray Anal. 10, 9 (1967).Google Scholar
11. Authier, A., in Modern Diffraction and Imaging Techniques in Materials Science, edited by Amelinckx, S., Gevers, R., Remaut, G., and Landuyt, J. Van (North Holland Publishing Company, Amsterdam, 1970), pp.481–520 Google Scholar
12. Hart, M., J. Appl. Cryst. 8, 436 (1975).Google Scholar
13. Klapper, H., Prog. Crystal Growth and Charact. 14, 367 (1987).CrossRefGoogle Scholar
14. Bierlein, J.D. and Vanherzeele, H., J. Opt. Soc. Am. B 6, 622 (1989).CrossRefGoogle Scholar
15. Poel, C.J. van der, Bierlein, J.D., Brown, J.B. and Colak, S., Appl. Phys. Lett. 57, 2074 (1990).CrossRefGoogle Scholar
16. Bolt, R.J., Haas, H. de, Sebastian, M.T. and Klapper, H., J. Cryst. Growth 110, 587 (1991).Google Scholar
17. Halfpenny, P.J., O'Neill, L., Sherwood, J.N., Simpson, G.S., Yokotani, A., Miyamoto, A., Sasaki, T. and Nakai, S., J. Cryst. Growth 113, 722 (1991).Google Scholar
18. Miltat, J. and Dudley, M., J. Appl. Cryst. 13, 555 (1980).Google Scholar
19. Wang, S., Dudley, M., Cheng, L.K., and Bierlein, J.D., in this volume, Applications of Synchrotron Radiation Techniques to Materials Science, edited by Perry, D.L., Stockbauer, R., Shinn, N., D'Amico, K., and Terminello, L. (Mater. Res. Soc. Symp. Proc. 307, Pittsburgh, PA 1993).Google Scholar
20. Silicon Carbide, A High Temperature Semiconductor edited by O'Connor, J.R. and Smilten, J. (Pergamon, Oxford, 1960).Google Scholar
21. Tanner, B. K, Midgley, D. and Safa, M., J. Appl. Cryst. 10, 281 (1977).Google Scholar
22. Wang, S., Dudley, M., Carter, C. Jr., Asbury, D. and Fazi, C., in this volume, Applications of Synchrotron Radiation Techniques to Materials Science, edited by Perry, D.L., Stockbauer, R., Shinn, N., D'Amico, K., and Terminello, L. (Mater. Res. Soc. Symp. Proc. 307, Pittsburgh, PA 1993). Develop.Google Scholar
23. Yao, G.-D., Hou, S.-Y., Dudley, M., and Phillips, J.M., J. Mater. Res. 7, 1847 (1992).Google Scholar
24. Yao, G.-D., PhD Thesis, SUNY Stony Brook, (1992).Google Scholar
25. Dudley, M. and Yao, G.-D., J. of Phys. D: Appl. Phys. 26, 120, (1993).Google Scholar
26. McMahon, R.A., Ahmed, H., and Cullis, A.G., Appl. Phys. Letters 37, 1016 (1980).Google Scholar
27. Ritz, K.N., Delfino, M., Cooper, C.B. and Powell, R.A., J. Appl. Phys. 60, 800 (1986).Google Scholar
28. Singh, R., J. Appl. Phys. 63, R59–R109 (1987).Google Scholar
29. Dudley, M., Wang, F.F.Y., Fanning, T., Tolis, G., Wu, J. and Hodul, D.T., Mater. Letters 10, 87 (1990).CrossRefGoogle Scholar
30. Dudley, M., Wang, F.F.Y., Fanning, T., and Gordon-Smith, D., in Rapid Thermal and Integrated Processing, edited by Green, M.L., Gelpey, J.C., Wortman, J., and Singh, R. (Mater. Res. Soc. Symp. Proc. 224, Pittsburgh, PA, 1991), pp.61–66.Google Scholar