Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-13T07:31:41.430Z Has data issue: false hasContentIssue false
  • English
  • Français

ZnO Microcrystals for Light Emitting Diode and Photovoltaic Applications with Integration on Flexible Substrates

Published online by Cambridge University Press:  31 January 2011

Jesse J Cole  and
Heiko Jacobs
Jesse J Cole
Affiliation:
cole0474@umn.edu, University of Minnesota, Electrical Engineering, Minneapolis, Minnesota, United States
Heiko Jacobs
Affiliation:
hjacobs@umn.edu, University of Minnesota, Electrical Engineering, Minneapolis, Minnesota, United States
Get access

Abstract

We report a new integration approach to produce arrays of ZnO microcrystals for optoelectronic and photovoltaic applications. Demonstrated applications are n-ZnO/p-GaN heterojunction LEDs and photovoltaic cells. The integration process uses an oxygen plasma treatment in combination with a photoresist pattern on Magnesium doped GaN substrates to define a narrow sub-100nm width nucleation region. ZnO is synthesized in the defined areas by a hydrothermal technique using zinc acetate and hexamethylenetetramine precursors. Nucleation is followed by lateral epitaxial overgrowth producing single crystal disks of ZnO. The process provides control over the dimension and location of the ZnO crystals. The quality of the patterned ZnO is high; the commonly observed defect related emission in the electroluminescence spectra is suppressed and a single near-band-edge UV peak is observed. Transfer printing of the ZnO microcrystals onto a flexible substrate is also demonstrated in the context of transparent flexible electronics.

Keywords

optoelectronicmicroelectronicssurface reaction
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1192: Symposium PP – Materials and Devices for Flexible and Stretchable Electronics , 2009 , 1192-PP13-05
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Fan, Z., Lu, J. G., Journal of Nanoscience and Nanotechnology 2005, 5, 1561.10.1166/jnn.2005.182Google Scholar
[2] Vispute, R. D., Talyansky, V., Choopun, S., Sharma, R. P., Venkatesan, T., He, M., Tang, X., Halpern, J. B., Spencer, M. G., Li, Y. X., Salamanca-Riba, L. G., Iliadis, A. A., Jones, K. A., Applied Physics Letters 1998, 73, 348.10.1063/1.121830Google Scholar
[3] Wang, X., Cole, J., Dabiran, A. M., Jacobs, H. O., “ZnO Nanowire/p-GaN Heterojunction LEDs”, presented at Mater. Res. Soc. Symp. Proc., Warrendale, PA, 2007.Google Scholar
[4] Wang, X., Cole, J., Jacobs, H. O., “Electroluminescence of ZnO Nanowire/p-GaN Heterojunction Light Emitting Diodes”, presented at Proc. 2007 NSTI Nanotechnology Conference, Santa Clara, CA, 2007.Google Scholar
[5] Yang, P., Yan, H., Mao, S., Russo, R., Johnson, J., Saykally, R., Morris, N., Pham, J., He, R., Choi, H.-J., Advanced Functional Materials 2002, 12, 323.10.1002/1616-3028(20020517)12:5<323::AID-ADFM323>3.0.CO;2-G3.0.CO;2-G>Google Scholar
[6] Yan, H., Johnson, J., Law, M., He, R., Knutsen, K., McKinney, J. R., Pham, J., Saykally, R., Yang, P., Advanced Materials (Weinheim, Germany) 2003, 15, 1907.10.1002/adma.200305490Google Scholar
[7] Hauschild, R., Kalt, H., Applied Physics Letters 2006, 89, 123107/1.10.1063/1.2354427Google Scholar
[8] van Vugt, L. K., Ruehle, S., Vanmaekelbergh, D., Nano Letters 2006, 6, 2707.10.1021/nl0616227Google Scholar
[9] Law, M., Lori, E. Greene, Justin, C. Johnson, Saykally, R., Yang, P., Nature Materials 2005, 4, 455.10.1038/nmat1387Google Scholar
[10] Leschkies Kurtis, S., Divakar, R., Basu, J., Enache-Pommer, E., Boercker Janice, E., Carter, C. B., Uwe, R. Kortshagen, David, J. Norris, Eray, S. Aydil, Nano Letters 2007, 7, 1793.10.1021/nl070430oGoogle Scholar
[11] Levy-Clement, C., Tena-Zaera, R., Ryan, M. A., Katty, A., Hodes, G., Advanced Materials (Weinheim, Germany) 2005, 17, 1512.10.1002/adma.200401848Google Scholar
[12] Soci, C., Zhang, A., Xiang, B., Dayeh, S. A., Aplin, D. P. R., Park, J., Bao, X. Y., Lo, Y. H., Wang, D., Nano Letters 2007, 7, 1003.10.1021/nl070111xGoogle Scholar
[13] Ju, S., Lee, K., Janes, D. B., Yoon, M.-H., Facchetti, A., Marks, T. J., Nano Letters 2005, 5, 2281.10.1021/nl051658jGoogle Scholar
[14] Futua, M., Furuta, H., Matsuda, T., Hirao, T., Hiramatsu, T., Hokari, H., Yoshida, M., Materials Integration 2006, 19, 10.Google Scholar
[15] Schrier, J., Demchenko, D. O., Wang, L.-W., Alivisatos, A. P., Nano Letters 2007, 7, 2377.10.1021/nl071027kGoogle Scholar
[16] Hsu, J. W. P., Tian, Z. R., Simmons, N. C., Matzke, C. M., Voigt, J. A., Liu, J., Nano Letters 2005, 5, 83.10.1021/nl048322eGoogle Scholar
[17] Masuda, Y., Kinoshita, N., Sato, F., Koumoto, K., Crystal Growth & Design 2006, 6, 75.10.1021/cg050124tGoogle Scholar
[18] Greene, L. E., Law, M., Tan, D. H., Montano, M., Goldberger, J., Somorjai, G., Yang, P., Nano Letters 2005, 5, 1231.10.1021/nl050788pGoogle Scholar
[19] Andeen, D., Kim, J. H., Lange, F. F., Goh, G. K. L., Tripathy, S., Advanced Functional Materials 2006, 16, 799.10.1002/adfm.200500817Google Scholar
[20] Kim, J. H., Andeen, D., Lange, F. F., Advanced Materials (Weinheim, Germany) 2006, 18, 2453.Google Scholar
[21] Nakamura, S., Senoh, M., Nagahama, S.-i., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., Sugimoto, Y., Kozaki, T., Umemoto, H., Sano, M., Chocho, K., Applied Physics Letters 1998, 72, 211.10.1063/1.120688Google Scholar
[22] Alivov, Y. I., Kalinina, E. V., Cherenkov, A. E., Look, D. C., Ataev, B. M., Omaev, A. K., Chukichev, M. V., Bagnall, D. M., Applied Physics Letters 2003, 83, 4719.10.1063/1.1632537Google Scholar
[23] Alivov, Y. I., Van, J. E. Nostrand, Look, D. C., Chukichev, M. V., Ataev, B. M., Applied Physics Letters 2003, 83, 2943.10.1063/1.1615308Google Scholar
[24] Osinsky, A., Dong, J. W., Kauser, M. Z., Hertog, B., Dabiran, A. M., Chow, P. P., Pearton, S. J., Lopatiuk, O., Chernyak, L., Applied Physics Letters 2004, 85, 4272.10.1063/1.1815377Google Scholar
[25] Park, W. I., Yi, G.-C., Advanced Materials (Weinheim, Germany) 2004, 16, 87.Google Scholar
[26] Jeong, M.-C., Oh, B.-Y., Ham, M.-H., Myoung, J.-M., Applied Physics Letters 2006, 88, 202105/1.10.1063/1.2204655Google Scholar
[27] Bao, J., Zimmler, M. A., Capasso, F., Wang, X., Ren, Z. F., Nano Letters 2006, 6, 1719.10.1021/nl061080tGoogle Scholar
[28] Huang, M. H., Mao, S., Feick, H., Yan, H., Wu, Y., Kind, H., Weber, E., Russo, R., Yang, P., Science (Washington, DC, United States) 2001, 292, 1897.Google Scholar