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Amorphous Silicon Based Waveguides And Light Modulators For Silicon Low-Cost Photonic Integrated Circuits

Published online by Cambridge University Press:  10 February 2011

G. Cocorullo ,
F. G. Della Corte ,
R. De Rosa ,
I. Rendina ,
A. Rubino  and
E. Terzini
G. Cocorullo
Affiliation:
National Research Council – Research Institute for Electromagnetism and Electronic Components (IRECE-CNR), Via Diocleziano, 328 I-80124 Naples, Italydellacor@irece1.irece.na.cnr.it also with University of Calabria - Electronic Engineering Dept., 1-87036 Rende (CS), Italy
F. G. Della Corte
Affiliation:
National Research Council – Research Institute for Electromagnetism and Electronic Components (IRECE-CNR), Via Diocleziano, 328 I-80124 Naples, Italydellacor@irece1.irece.na.cnr.it
R. De Rosa
Affiliation:
Ente per le Nuove Tecnologie, l'Energia e l'Ambiente – Centro di Portici (ENEA-CRP), Via Vecchio Macello, I-80055 Portici (Naples), Italy
I. Rendina
Affiliation:
National Research Council – Research Institute for Electromagnetism and Electronic Components (IRECE-CNR), Via Diocleziano, 328 I-80124 Naples, Italydellacor@irece1.irece.na.cnr.it
A. Rubino
Affiliation:
Ente per le Nuove Tecnologie, l'Energia e l'Ambiente – Centro di Portici (ENEA-CRP), Via Vecchio Macello, I-80055 Portici (Naples), Italy
E. Terzini
Affiliation:
Ente per le Nuove Tecnologie, l'Energia e l'Ambiente – Centro di Portici (ENEA-CRP), Via Vecchio Macello, I-80055 Portici (Naples), Italy
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Abstract

This paper reports about the fabrication and experimental test of an interferometric light intensity modulator integrated in a low loss (0.7 dB/cm), amorphous silicon based waveguide. It measures approximately 1 mm in length, while its cross section is 30-μm-wide and 3-μm-high. The device, which exploits the strong thermo-optic effect in thin film a-Si for its operation, is designed for application at the infrared wavelengths of 1.3 and 1.55 μm. The measured maximum operating on-off switching frequency of the device is 600 kHz. The very simple fabrication technology involves maximum process temperatures of 230 °C, and is therefore compatible with the standard microelectronic technology. This offers a new opportunity for the integration of optical and electronic functions on the same substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 486: Symposium H – Materials & Devices for Silicon Based Optoelectronics , 1997 , 113
Copyright
Copyright © Materials Research Society 1998

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References

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