Hostname: page-component-7479d7b7d-pfhbr Total loading time: 0 Render date: 2024-07-11T00:25:46.793Z Has data issue: false hasContentIssue false
  • English
  • Français

Amorphous Silicon Films from Dichlorosilane and Hydrogen

Published online by Cambridge University Press:  16 February 2011

J.N. Bullock  and
S. Wagner
J.N. Bullock
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
Get access

Abstract

We deposited a-Si:H thin-films by PECVD of dichlorosilane (SiH2Cl2) diluted with H2 in a DC-triode glow-discharge reactor. The dilution ratio, given as the ratio of H2 to SiH2Cl2 flows, was varied from 0 to 130 and the pressure was varied from 0.3 to 0.75 Torr as the hydrogen fraction was increased. We report on the properties of the deposition plasma and the resulting films; namely the plasma pressure-voltage characteristics and the films' chemical composition, structure, and optoelectronic properties. For hydrogen dilution ratios greater than 2:1, dense, rigid films are deposited, with optical bandgaps from 1.75 to 1.9 eV. With increasing hydrogen dilution a growth rate of 5 Å/s is maintained while photoconductivities increase and defect densities decrease. The best films are obtained at a dilution ratios of 16:1 to 32:1, where we have obtained a dark conductivity of 10−13 S/cm, a photoconductivity of 2×10−7 S/cm (at G=1020 cm-3 s−1) and a defect density of 1.5×1016 cm−3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 97
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Slobodin, D., PhD Thesis, Princeton University, 1987.Google Scholar
2 Tauc, J., Grigorivici, R. and Vancu, A., Phys. Stat. Solidi 15, 627 (1966).Google Scholar
3 Vanecek, M., Kocka, J., Stuchlik, J. and Triska, A., Solid. State Comm. 39, 1199 (1981).Google Scholar
4 Lucovsky, G., Solid State Comm. 29, 571 (1979).Google Scholar
5 Fang, C.J., Gruntz, K.J., Ley, L., Cardona, M., Demond, F.J., Muller, G. and Kalbitzer, S., J. Non-Cryst. Solids 35&36, 255, 1890.Google Scholar
6 Kalem, S., Mostefaoui, R., Bourneix, J. and Chevallier, J., Philosophical Magazine B 53 (6), 509 (1986).Google Scholar
7 Brodsky, M.H., Cardona, M., Cuomo, J.J., Phys. Rev. B 16, 3556 (1977).Google Scholar
8 Zhi-Quiang, Wu, Cun-Yi, Xu, Wei-Ping, Zhang, Zhao-Bo, Zheng and Rong-Chuan, Fang, J. Non-Cryst. Solids 59, 217 (1983).Google Scholar
9 Annual Book of ASTM Standards, “Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption”, A10.05, F121 (1983).Google Scholar