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An X-ray Diffraction Investigation of Tin Oxide Deposition and Annealing

Published online by Cambridge University Press:  21 March 2011

Joshua J. Robbins ,
Yen-Jung Huang ,
Mailasu Bai ,
Tyrone Vincent  and
Colin A. Wolden
Joshua J. Robbins
Affiliation:
Department of Division of Engineering Golden, Colorado School of Mines, Golden, CO 80401-1887, USA
Yen-Jung Huang
Affiliation:
Department of Division of Engineering Golden, Colorado School of Mines, Golden, CO 80401-1887, USA
Mailasu Bai
Affiliation:
Department of Division of Engineering Golden, Colorado School of Mines, Golden, CO 80401-1887, USA
Tyrone Vincent
Affiliation:
Department of Chemical Engineering, Colorado School of Mines, Golden, CO 80401-1887, USA
Colin A. Wolden
Affiliation:
Department of Division of Engineering Golden, Colorado School of Mines, Golden, CO 80401-1887, USA
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Abstract

Tin oxide thin films were deposited by plasma-enhanced chemical vapor deposition (PECVD) for applications as a transparent conductor. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to quantify the crystal structure and morphology of these films both as-deposited and after annealing conditions. Annealing was performed in an argon environment as a function of time and temperature. Although annealing was found to significantly improve electrical properties, the structure as measured by XRD remained largely unchanged. Hall effect measurements show that the improvements in resistivity are due to increases in carrier concentration. XRD did reveal that films deposited on the powered electrode had a film orientation that was distinctly different than films deposited on the grounded electrode. These changes suggest the importance of ion bombardment energy. The structural changes were correlated with improved electrical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F1.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

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