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Annealing of CoxCu1-x / Cu Multilayers

Published online by Cambridge University Press:  10 February 2011

Jörg Ebert
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
Mohammad Ghafari
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
Branko Stahl
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
Horst Hahn
Affiliation:
Darmstadt University of Technology, Institute of Material Science, Thin Films Division, Petersenstraβe 23, 64287 Darmstadt, Germany
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Abstract

In the multilayer system cobalt / copper at the second antiferromagnetic coupling maximum (2. AFM) with a copper thickness of dCu = 2,2 nm it is possible to reduce magnetoresistive hysteresis by the use of either very thin Co-layers or by alloyed magnetic layers Co1-xCux. It was possible to achieve values for the giant magnetoresistance effect of GMR ≈ 20 % for as prepared samples. A heat treatment was applied to study the degeneration of the system. For annealing at moderate temperatures (Tanneal ≤ 250°C) an increase up to GMR ≈ 25 % was observed. Annealing at slightly higher temperatures lead to an rapid decrease in the GMR effect. To study the structural changes the method of x-ray reflectivity was utilized showing changes in interface roughness as well as in bilayer thickness.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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