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Applications of Optoelectrochemical Impedance Measurements on Electrolyte/Dielectric/Semiconductor Structure:Cartographic Analysis

Published online by Cambridge University Press:  21 February 2011

J. R. Martin ,
P. Royer  and
E. Souteyrand
J. R. Martin
Affiliation:
Ecole Centrale de Lyon - Physico-Chimie des Interfaces; B. P. 163; 69131 ECULLY- Cedex FRANCE
P. Royer
Affiliation:
Ecole Centrale de Lyon - Physico-Chimie des Interfaces; B. P. 163; 69131 ECULLY- Cedex FRANCE
E. Souteyrand
Affiliation:
Ecole Centrale de Lyon - Physico-Chimie des Interfaces; B. P. 163; 69131 ECULLY- Cedex FRANCE
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Abstract

The use of a weak modulated illumination with above-bandgap light energy as a probe scanning a Electrolyte/Dielectric/Semiconductor structure under electrochemical potentiostatic polarization gives an opportunity to obtain qualitative cartographies of different electrical parameters characterizing the Semiconductor/Dielectric interface.

Keywords

optoelectrochemical impedances-SC/insulator interface- surface states - cartography
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 261: Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect , 1992 , 51
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Stricot, Y. - Thesis, Ecole Centrale de Lyon, 1986.Google Scholar
[2] Stricot, Y., Clechet, P., Martin, J.R., Appl. Phys. Lett. 49 (1) 32 (1986).CrossRefGoogle Scholar