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As‐Deposited Superconducting Y‐Ba‐Cu‐0 Films on GaAs Substrate by High Pressure Dc Sputtering Process

Published online by Cambridge University Press:  28 February 2011

R.J. Lin ,
Y.L. Lin ,
F.M. Pan  and
P.T. Wu
R.J. Lin
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195 Chung‐hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C.
Y.L. Lin
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195 Chung‐hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C.
F.M. Pan
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195 Chung‐hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C.
P.T. Wu
Affiliation:
Materials Research Laboratories, Industrial Technology Research Institute, 195 Chung‐hsing Rd., Sec. 4, Chutung, Hsinchu 31015, Taiwan, R.O.C.
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Abstract

Superconducting Y‐Ba‐Cu‐0 thin films on (100)GaAs substrate have been successfully prepared by the high pressure DC sputtering process without further post‐annealing treatment. The target was compound Y1Ba2Cu3Ox made by solid‐state reaction. The sputtering gas was Ar‐50%02, and total pressure was 1.5 torr. The substrate temperature was lower than 450°C. The best superconductivity of the film is Tc(onset) = 95K and Tc(R=0) = 40K. There are no mi‐crocracks on the film surface. The interdiffusion between the film and GaAs is limited.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 169: Symposium M – High Temperature Superconductors: Fundamental Properties and Novel Materials Processing , 1989 , 631
Copyright
Copyright © Materials Research Society 1990

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References

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