Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-10T03:20:08.205Z Has data issue: false hasContentIssue false
  • English
  • Français

a-Si TFT Technologies for AM-LCDS

Published online by Cambridge University Press:  15 February 2011

Nobuki Ibaraki
Nobuki Ibaraki*
Affiliation:
Toshiba Corporation, Display Device Engineering Laboratory8 Shinsugita-cho, Isogo-ku, Yokohama 235, Japan
Get access

Abstract

A technical trend for a-Si TFTs is their application to large-size, high-pixel density AMLCDs such as XGA, EWS, and HDTV. In order to realize these LCDs, the TFT device characteristics must be improved. Future technologies, which will be necessary to fabricate TFTs with improved characteristics are as follows,

(1) Fully self-aligned TFT technology: A SA-TFT structure reduces the feedthrough voltage caused by parasitic capacitance due to gate/source overlap. This results in an improved picture quality and a higher aperture ratio. Fabrication of such a structure would require ion doping technology.

(2) Ion doping technology: This non-mass-separated implantation technique has large area doping capability and much higher doping speed compared to conventional ion implantation technique. The major problems with the ion doping technique is the implantation of unwanted species which deteriorate the quality of source/drain and channel regions of TFTs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 3
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Ibaraki, N., Proc. 12th Int. Display Res. Confr (1992) 205, J. Institute of Television Eng. Japan 47 (1993) 600 (in Japanese)Google Scholar
[2] Nishida, S., Uchida, H., Kaneko, S., Mat. Res. Soc. Symp. Proc. 219 (1991) 303 Google Scholar
[3] TRIM 91.08 by Ziegler, J. F., Biersack, J. P., IBM-Research, 28–0, Yorktown, New York 10598 USAGoogle Scholar
[4] Kakkad, R., Shimano, T., Ibaraki, N., Jpn. J. Appl. Phys. 31 (1992) 4563, Ext. Abstract 1992 Int. Conf Solid State Devices & Materials, (1992) 152Google Scholar
[5] Shimano, T., Kakkad, R., Ibaraki, N., Ext. Abstract 1993 Int. Conf. SSDM (1993) 1008Google Scholar
[6] Akiyama, M., Ikeda, Y., Ikeda, M., Suzuki, K., Digest of Tech. Papers, Society Information Display Int. Symp.(1993) 887Google Scholar