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Atmospheric Pressure Chemical Vapor Deposition of Gallium Nitride Thin Films

Published online by Cambridge University Press:  25 February 2011

Roy G. Gordon ,
David M. Hoffman  and
Umar Riaz
Roy G. Gordon
Affiliation:
Harvard University, Department of Chemistry, 12 Oxford Street, Cambridge, MA 02138
David M. Hoffman
Affiliation:
University of Houston, Department of Chemistry, Houston, TX 77204
Umar Riaz
Affiliation:
Harvard University, Department of Chemistry, 12 Oxford Street, Cambridge, MA 02138
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Abstract

The atmospheric-pressure chemical vapor deposition of gallium nitride films from hexakis(dimethylamido)digallium, Ga2(NMe2)6, and ammonia precursors at 200 °C with growth rates up to 1000 Å/min is described. The films were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Rutherford backscattering analysis showed that the N/Ga ratio was 1.12–1.17. The films were crystalline with ≃ 5–15 nm crystallites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 95
Copyright
Copyright © Materials Research Society 1991

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References

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